STS65R190SS2TR MOSFET. Datasheet pdf. Equivalent
Type Designator: STS65R190SS2TR
Marking Code: 65R190SS2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 169 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO263
STS65R190SS2TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS65R190SS2TR Datasheet (PDF)
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