STS65R580MJS2 Datasheet and Replacement
Type Designator: STS65R580MJS2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO251
STS65R580MJS2 substitution
STS65R580MJS2 Datasheet (PDF)
sts65r580ds2tr sts65r580fs2 sts65r580ss2 sts65r580ss2tr sts65r580mjs2.pdf
STS65R580D(F)(S)(MJ)S2 8A, 650V MOS 2STS65R580D(F)(S)(MJ)S2 N MOSFET MOS 1 13STS65R580D(F)(S)(MJ)S2
sts65r280ds2tr sts65r280fs2.pdf
STS65R280D(F)S2 14A650V MOS 2STS65R280D(F)S2 N MOSFET MOS 1 STS65R280D(F)S2 /3
sts65r190fs2 sts65r190l8as2tr sts65r190ts2 sts65r190ss2 sts65r190ss2tr.pdf
STS65R190F(L8A)(T)(S)S2 20A650V MOS 2STS65R190F(L8A)(T)(S)S2 N MOSFET MOS 1 STS65R190F(L8A)(T)(S)S2
Datasheet: STS65R190L8AS2TR , STS65R190SS2 , STS65R190SS2TR , STS65R190TS2 , STS65R280DS2TR , STS65R280FS2 , STS65R580DS2TR , STS65R580FS2 , IRF4905 , STS65R580SS2 , STS65R580SS2TR , SVD1055SA , SVD3205STR , SVD540DTR , SVD540F , SVD640DTR , SVD640S .
History: 60N10E | SWD4N65K2 | STP270N8F7 | MTP10N10 | NTTFS002N04C | WMN15N65C2 | IRL40B215
Keywords - STS65R580MJS2 MOSFET datasheet
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History: 60N10E | SWD4N65K2 | STP270N8F7 | MTP10N10 | NTTFS002N04C | WMN15N65C2 | IRL40B215
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