SVF10N65K MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

SVF10N65K Specs and Replacement

Type Designator: SVF10N65K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO262

SVF10N65K substitution

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SVF10N65K datasheet

..1. Size:403K silan
svf10n65t svf10n65f svf10n65k svf10n65s svf10n65str.pdf pdf_icon

SVF10N65T/F/K/S 10A 650V N 2 SVF10N65T/F/K/S N MOS F-CellTM VDMOS 1 3 ... See More ⇒

6.1. Size:601K 1
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SVF10N65T/F_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch... See More ⇒

6.2. Size:290K silan
svf10n65cfj.pdf pdf_icon

SVF10N65CFJ_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand... See More ⇒

6.3. Size:361K silan
svf10n65cf svf10n65ck svf10n65cfjh.pdf pdf_icon