SVF12N65STR Datasheet and Replacement
Type Designator: SVF12N65STR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 156 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO263
SVF12N65STR substitution
SVF12N65STR Datasheet (PDF)
svf12n65f svf12n65k svf12n65s svf12n65str.pdf
SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
svf12n65f svf12n65t.pdf
SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
svf12n65cf svf12n65ck svf12n65cs svf12n65ckl svf12n65cfq.pdf
SVF12N65CF/K/S/KL/FQ 12A650V N SVF12N65CF/K/S/KL/FQ N MOS F-CellTM VDMOS A
svf12n65t svf12n65f.pdf
SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3
Datasheet: SVF10N65K , SVF10N65S , SVF10N65STR , SVF12N60CF , SVF12N60CFJ , SVF12N60STR , SVF12N65K , SVF12N65S , P0903BDG , SVF13N50AF , SVF13N50CFJ , SVF13N50S , SVF13N50STR , SVF14N25CD , SVF18N65EFJH , SVF18NE50PN , SVF20N50F .
History: FDZ204P | APT47N60BCFG | IRF7815PBF | SSM3K335R | CS50N06P | AFN02N60T220T | NCV8408
Keywords - SVF12N65STR MOSFET datasheet
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History: FDZ204P | APT47N60BCFG | IRF7815PBF | SSM3K335R | CS50N06P | AFN02N60T220T | NCV8408
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