All MOSFET. SVF13N50AF Datasheet

 

SVF13N50AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVF13N50AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.83 nC
   trⓘ - Rise Time: 76.67 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO220F

 SVF13N50AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVF13N50AF Datasheet (PDF)

 ..1. Size:296K  silan
 svf13n50af.pdf

SVF13N50AF SVF13N50AF

SVF13N50AF 13A500V N 2SVF13N50AF N MOS F-CellTM VDMOS 13 1.

 6.1. Size:447K  silan
 svf13n50t svf13n50f svf13n50pn.pdf

SVF13N50AF SVF13N50AF

SVF13N50T/F/PN 13A500V N SVF13N50T/F/PN N MOS F-CellTM VDMOS

 6.2. Size:321K  silan
 svf13n50cfj.pdf

SVF13N50AF SVF13N50AF

SVF13N50CFJ 13A500V N 2SVF13N50CFJ N MOS F-CellTM VDMOS 1 3

 6.3. Size:414K  silan
 svf13n50f svf13n50t svf13n50pn svf13n50s svf13n50str.pdf

SVF13N50AF SVF13N50AF

SVF13N50T(F)(PN)(S) 13A500V N 2SVF13N50T(F)(PN)(S) N MOS F-CellTM VDMOS 1. 2. 3.1

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SVS11N65FD2

 

 
Back to Top