All MOSFET. SVF20N50F Datasheet

 

SVF20N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVF20N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49.5 nC
   trⓘ - Rise Time: 47.5 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO220F

 SVF20N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVF20N50F Datasheet (PDF)

 ..1. Size:346K  silan
 svf20n50f svf20n50pn.pdf

SVF20N50F SVF20N50F

SVF20N50F/PN 20A500V N 2SVF20N50F/PN N MOS F-CellTM VDMOS 13

 8.1. Size:328K  silan
 svf20n60f.pdf

SVF20N50F SVF20N50F

SVF20N60F 20A600V N 2SVF20N60F N MOS F-CellTM VDMOS 13 1

 8.2. Size:311K  silan
 svf20ne50pn.pdf

SVF20N50F SVF20N50F

SVF20NE50PN 20A500V N 2. SVF20NE50PN N MOS F-CellTM VDMOS 1.

 8.3. Size:419K  silan
 svf20n60f svf20n60pn.pdf

SVF20N50F SVF20N50F

SVF20N60F/PN 20A600V N SVF20N60F/PN N MOS F-CellTM VDMOS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HUF75329P3

 

 
Back to Top