All MOSFET. SVF3878AP7 Datasheet

 

SVF3878AP7 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVF3878AP7
   Marking Code: 3878A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.28 Ohm
   Package: TO247

 SVF3878AP7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVF3878AP7 Datasheet (PDF)

 ..1. Size:349K  silan
svf3878ap7.pdf

SVF3878AP7 SVF3878AP7

SVF3878AP7 9A900V N 2. SVF3878AP7 N MOS F-CellTM VDMOS 1.

 7.1. Size:370K  silan
svf3878p7.pdf

SVF3878AP7 SVF3878AP7

SVF3878P7 9A900V N 2SVF3878P7 N MOS F-CellTM VDMOS 1 AC-DC

 7.2. Size:300K  silan
svf3878pn.pdf

SVF3878AP7 SVF3878AP7

SVF3878PN 9A900V N SVF3878PN N MOS F-CellTM VDMOS AC-DC

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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