SVF4N150P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF4N150P7
Marking Code: 4N150P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 91 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO247
SVF4N150P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF4N150P7 Datasheet (PDF)
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SVF4N150PF(P7)(F) 4A1500V N 2 SVF4N150PF(P7)(F) N MOS 112 F-CellTM VDMOS 3TO-220F-3L31. 2.
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SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3
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SVF4N65RD/M/MJ/F/T 4A650V N 2SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 113TO-252-2L3
svf4n65caf svf4n65cad svf4n65cam svf4n65camj.pdf
SVF4N65CAF/D/M/MJ 4A650V N 2SVF4N65CAF/D/M/MJ N MOS F-CellTM VDMOS 13
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ 4A600V N SVF4N60CAF/K/D/T/MN/MJ N MOS F-CellTM VDMOS
svf4n65caf svf4n65cad svf4n65cam svf4n65camj svf4n65camn svf4n65cak.pdf
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SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS
svf4n65caf svf4n65cadtr svf4n65cam svf4n65camj svf4n65camn svf4n65cak.pdf
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svf4n60cafj.pdf
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: ZXMN3A04K
History: ZXMN3A04K
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