STM4470 MOSFET Datasheet: N-Ch, 40V, 10A. Full specification with pinout and replacement list

STM4470 Specs and Replacement

Type Designator: STM4470

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP8

STM4470 substitution

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STM4470 datasheet

..1. Size:137K samhop
stm4470.pdf pdf_icon

Green Product STM4470 SamHop Microelectronics Corp. Oct. 16. 2006 Ver1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES d Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 10 @ VGS = 10V 40V 10A Surface Mount Package. 13 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Para... See More ⇒

0.1. Size:117K samhop
stm4470a.pdf pdf_icon

STM4470A SamHop Microelectronics Corp. May, 10 2007 N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( m ) Max R ugged and reliable. 10.5 @ VGS = 10V 40V 10A S urface Mount Package. 13.5 @ VGS = 4.5V E S D Protected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise note... See More ⇒

0.2. Size:116K samhop
stm4470e.pdf pdf_icon

STM4470E SamHop Microelectronics Corp. May. 15 2007 ver1.0 N-Channel Enhancement Mode Field Effect Transistor F E ATUR E S PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( m ) Max R ugged and reliable. 12 @ VGS = 10V 40V 9.5A S urface Mount Package. 15 @ VGS = 4.5V E S D Protected. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise ... See More ⇒

8.1. Size:140K samhop
stm4472.pdf pdf_icon

Green Product S TM4472 S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0 N- Channel nhancement Mode Field Effect ransistor E T F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 24 @ VG S = 10V S urface Mount Package. 40V 7 A 30 @ VG S = 4.5V E S D Protected. S O-8 1 ABS OLUTE MAXIMUM R ... See More ⇒

Detailed specifications: STM4532, FDP120N10, STM4470E, FDP12N50, FDP12N50NZ, FDP12N60NZ, STM4470A, FDP150N10, IRFZ44, FDP150N10AF102, STM4460, FDP15N40, STM4446, FDP16AN08A0, FDP18N20F, STM4439A, FDP18N50