SVF4N65MJ Datasheet. Specs and Replacement
Type Designator: SVF4N65MJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO251
SVF4N65MJ substitution
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SVF4N65MJ datasheet
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... See More ⇒
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SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3 ... See More ⇒
Detailed specifications: SVF4N60CADTR, SVF4N60CAFJ, SVF4N60DTR, SVF4N65CADTR, SVF4N65CAFJH, SVF4N65CF, SVF4N65CMJ, SVF4N65DTR, K2611, SVF4N65RDTR, SVF4N70DTR, SVF4N70F, SVF4N70MJ, SVF5N60DTR, SVF5N65DTR, SVF6N25CD, SVF6N60DTR
Keywords - SVF4N65MJ MOSFET specs
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