SVF4N65RDTR Datasheet. Specs and Replacement

Type Designator: SVF4N65RDTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO252

SVF4N65RDTR substitution

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SVF4N65RDTR datasheet

 5.1. Size:672K  silan
svf4n65rd svf4n65rm svf4n65rmj svf4n65rf svf4n65rt.pdf pdf_icon

SVF4N65RDTR

SVF4N65RD/M/MJ/F/T 4A 650V N 2 SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒

Detailed specifications: SVF4N60CAFJ, SVF4N60DTR, SVF4N65CADTR, SVF4N65CAFJH, SVF4N65CF, SVF4N65CMJ, SVF4N65DTR, SVF4N65MJ, EMB04N03H, SVF4N70DTR, SVF4N70F, SVF4N70MJ, SVF5N60DTR, SVF5N65DTR, SVF6N25CD, SVF6N60DTR, SVF6N60FQ

Keywords - SVF4N65RDTR MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.