All MOSFET. SVF4N70DTR Datasheet

 

SVF4N70DTR Datasheet and Replacement


   Type Designator: SVF4N70DTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.4 nS
   Cossⓘ - Output Capacitance: 56.43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252
 

 SVF4N70DTR substitution

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SVF4N70DTR Datasheet (PDF)

 ..1. Size:408K  silan
 svf4n70f svf4n70dtr.pdf pdf_icon

SVF4N70DTR

SVF4N70F/D 4A700V N 2SVF4N70F/D N MOS F-CellTM VDMOS 13

 7.1. Size:306K  silan
 svf4n70mj.pdf pdf_icon

SVF4N70DTR

SVF4N70MJ 4A700V N 2SVF4N70MJ N MOS F-CellTM VDMOS 13

 9.1. Size:801K  1
 svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf pdf_icon

SVF4N70DTR

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

 9.2. Size:800K  silan
 svf4n60d svf4n60f svf4n60t svf4n60m.pdf pdf_icon

SVF4N70DTR

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

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Datasheet: SVF4N60DTR , SVF4N65CADTR , SVF4N65CAFJH , SVF4N65CF , SVF4N65CMJ , SVF4N65DTR , SVF4N65MJ , SVF4N65RDTR , MMD60R360PRH , SVF4N70F , SVF4N70MJ , SVF5N60DTR , SVF5N65DTR , SVF6N25CD , SVF6N60DTR , SVF6N60FQ , SVF6N70DTR .

History: PSMN2R7-30PL | 2SK3498

Keywords - SVF4N70DTR MOSFET datasheet

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