All MOSFET. SVF5N60DTR Datasheet

 

SVF5N60DTR Datasheet and Replacement


   Type Designator: SVF5N60DTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO252
 

 SVF5N60DTR substitution

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SVF5N60DTR Datasheet (PDF)

 ..1. Size:458K  silan
 svf5n60f svf5n60dtr svf5n60k.pdf pdf_icon

SVF5N60DTR

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS 1 1 F-CellTM VDMOS 3TO-252-2L3 1.

 6.1. Size:528K  1
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60DTR

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

 6.2. Size:563K  silan
 svf5n60f svf5n60d svf5n60k.pdf pdf_icon

SVF5N60DTR

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS F-CellTM VDMOS 1133TO-252-2L 1.

 6.3. Size:479K  silan
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60DTR

SVF5N60T/F/D/MJ 5A600V N 2SVF5N60T/F/D/MJ NMOSF-CellTMVDMOS 1 TO-252-2L3

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Datasheet: SVF4N65CF , SVF4N65CMJ , SVF4N65DTR , SVF4N65MJ , SVF4N65RDTR , SVF4N70DTR , SVF4N70F , SVF4N70MJ , AO3407 , SVF5N65DTR , SVF6N25CD , SVF6N60DTR , SVF6N60FQ , SVF6N70DTR , SVF6N70K , SVF6N70MJG , SVF6N70MN .

History: 4N100G-TF1-T | FQPF7N65CF105

Keywords - SVF5N60DTR MOSFET datasheet

 SVF5N60DTR cross reference
 SVF5N60DTR equivalent finder
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