SVF5N65DTR Datasheet and Replacement
Type Designator: SVF5N65DTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31.93 nS
Cossⓘ - Output Capacitance: 58 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
SVF5N65DTR substitution
SVF5N65DTR Datasheet (PDF)
svf5n65dtr svf5n65f.pdf
SVF5N65D/F 5A650V N 2SVF5N65D/F N MOS F-CellTM VDMOS 13 1. 2. 3.
svf5n65d svf5n65f.pdf
SVF5N65D/F 5A650V N 2SVF5N65D/F N MOS F-CellTM VDMOS 13 1. 2. 3.
svf5n60t svf5n60f svf5n60d svf5n60mj.pdf
SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
svf5n60f svf5n60d svf5n60k.pdf
SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS F-CellTM VDMOS 1133TO-252-2L 1.
Datasheet: SVF4N65CMJ , SVF4N65DTR , SVF4N65MJ , SVF4N65RDTR , SVF4N70DTR , SVF4N70F , SVF4N70MJ , SVF5N60DTR , AO4468 , SVF6N25CD , SVF6N60DTR , SVF6N60FQ , SVF6N70DTR , SVF6N70K , SVF6N70MJG , SVF6N70MN , SVF6N80DTR .
History: AON7902 | RQ3G100GN | MTP4411M3 | 19N10G-TMS4-T | 2SK410 | 2SK2146 | BSB028N06NN3G
Keywords - SVF5N65DTR MOSFET datasheet
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History: AON7902 | RQ3G100GN | MTP4411M3 | 19N10G-TMS4-T | 2SK410 | 2SK2146 | BSB028N06NN3G
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