2SK2753-01
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2753-01
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 160
nS
Cossⓘ -
Output Capacitance: 820
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
TO3P
2SK2753-01
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2753-01
Datasheet (PDF)
..1. Size:171K fuji
2sk2753-01.pdf 
N-channel MOS-FET2SK2753-01FAP-IIS Series 120V 32m 50A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character
7.1. Size:209K inchange semiconductor
2sk2753.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2753FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
8.1. Size:393K toshiba
2sk2750.pdf
2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2750 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.7 (typ.) (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V
8.2. Size:21K panasonic
2sk2751.pdf
Silicon Junction FETs (Small Signal) 2SK27512SK2751Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.22.8 0.3For pyro-electric sensor +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low noise-figure (NF) High gate-drain voltage VGDO3 Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are a
8.3. Size:179K utc
2sk2751.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Normal Lead Free Plating 1
8.4. Size:274K fuji
2sk2755-01.pdf
N-channel MOS-FET2SK2755-01FAP-IIS Series 450V 0,45 18A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri
8.5. Size:61K fuji
2sk2756-01r.pdf
FUJI POWER MOSFET2SK2756-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS
8.6. Size:62K fuji
2sk2759-01r.pdf
FUJI POWER MOSFET2SK2759-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS
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