SVF6N80MJ Datasheet. Specs and Replacement

Type Designator: SVF6N80MJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 132 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO251

SVF6N80MJ substitution

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SVF6N80MJ datasheet

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Detailed specifications: SVF6N60DTR, SVF6N60FQ, SVF6N70DTR, SVF6N70K, SVF6N70MJG, SVF6N70MN, SVF6N80DTR, SVF6N80K, IRF540, SVF740CT, SVF7N60CDTR, SVF7N60CSTR, SVF7N65CDTR, SVF7N65CFJH, SVF7N65CMJL, SVF7N65STR, SVF7N80FD

Keywords - SVF6N80MJ MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility