SVF740CT Datasheet and Replacement
Type Designator: SVF740CT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220
SVF740CT substitution
SVF740CT Datasheet (PDF)
svf740t svf740f.pdf
SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf740t svf740mj.pdf
SVF740T/MJ 10A400V N 2SVF740T/MJ N MOS 1213 F-CellTM VDMOS 3TO-251J-3L 1. 2. 3.
Datasheet: SVF6N60FQ , SVF6N70DTR , SVF6N70K , SVF6N70MJG , SVF6N70MN , SVF6N80DTR , SVF6N80K , SVF6N80MJ , 50N06 , SVF7N60CDTR , SVF7N60CSTR , SVF7N65CDTR , SVF7N65CFJH , SVF7N65CMJL , SVF7N65STR , SVF7N80FD , SVF7N80K .
History: BUK7C08-55AITE | HGB080N10A | BUK9620-100B | HM80N03I | 2N4222A | IXTH68P20T | UF830KL-TA3-T
Keywords - SVF740CT MOSFET datasheet
SVF740CT cross reference
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History: BUK7C08-55AITE | HGB080N10A | BUK9620-100B | HM80N03I | 2N4222A | IXTH68P20T | UF830KL-TA3-T
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