SVF7N60CDTR Datasheet. Specs and Replacement

Type Designator: SVF7N60CDTR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.7 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO252

SVF7N60CDTR substitution

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SVF7N60CDTR datasheet

 5.1. Size:783K  silan
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SVF7N60CDTR

SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS ... See More ⇒

 7.1. Size:512K  silan
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SVF7N60CDTR

... See More ⇒

 7.2. Size:627K  silan
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SVF7N60CDTR

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒

Detailed specifications: SVF6N70DTR, SVF6N70K, SVF6N70MJG, SVF6N70MN, SVF6N80DTR, SVF6N80K, SVF6N80MJ, SVF740CT, IRFP460, SVF7N60CSTR, SVF7N65CDTR, SVF7N65CFJH, SVF7N65CMJL, SVF7N65STR, SVF7N80FD, SVF7N80K, SVF7N80KL

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