SVF7N60CDTR Datasheet and Replacement
Type Designator: SVF7N60CDTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32.7 nS
Cossⓘ - Output Capacitance: 96 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
SVF7N60CDTR substitution
SVF7N60CDTR Datasheet (PDF)
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS
svf7n60f svf7n60s svf7n60d.pdf

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC
svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF6N70DTR , SVF6N70K , SVF6N70MJG , SVF6N70MN , SVF6N80DTR , SVF6N80K , SVF6N80MJ , SVF740CT , IRF640 , SVF7N60CSTR , SVF7N65CDTR , SVF7N65CFJH , SVF7N65CMJL , SVF7N65STR , SVF7N80FD , SVF7N80K , SVF7N80KL .
History: UPA1870BGR | OSG60R2K8DF
Keywords - SVF7N60CDTR MOSFET datasheet
SVF7N60CDTR cross reference
SVF7N60CDTR equivalent finder
SVF7N60CDTR lookup
SVF7N60CDTR substitution
SVF7N60CDTR replacement
History: UPA1870BGR | OSG60R2K8DF



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