SVF7N60CSTR Datasheet. Specs and Replacement
Type Designator: SVF7N60CSTR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 122 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32.7 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO263
SVF7N60CSTR substitution
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SVF7N60CSTR datasheet
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf
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svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf
SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS ... See More ⇒
svf7n60t svf7n60f.pdf
SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒
Detailed specifications: SVF6N70K, SVF6N70MJG, SVF6N70MN, SVF6N80DTR, SVF6N80K, SVF6N80MJ, SVF740CT, SVF7N60CDTR, IRFZ44, SVF7N65CDTR, SVF7N65CFJH, SVF7N65CMJL, SVF7N65STR, SVF7N80FD, SVF7N80K, SVF7N80KL, SVF8N65RDTR
Keywords - SVF7N60CSTR MOSFET specs
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