SVF8N65RDTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF8N65RDTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 87 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
SVF8N65RDTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF8N65RDTR Datasheet (PDF)
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