All MOSFET. SVF8N65RDTR Datasheet

 

SVF8N65RDTR Datasheet and Replacement


   Type Designator: SVF8N65RDTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252
 

 SVF8N65RDTR substitution

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SVF8N65RDTR Datasheet (PDF)

 ..1. Size:384K  silan
 svf8n65rmj svf8n65rdtr.pdf pdf_icon

SVF8N65RDTR

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 7.1. Size:429K  silan
 svf8n65t svf8n65f.pdf pdf_icon

SVF8N65RDTR

SVF8N65T/F 8A650V N SVF8N65T/F N MOS F-CellTM VDMOS AC-D

 8.1. Size:433K  silan
 svf8n60t svf8n60f.pdf pdf_icon

SVF8N65RDTR

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 8.2. Size:336K  silan
 svf8n60f.pdf pdf_icon

SVF8N65RDTR

SVF8N60F 8A600V N 2SVF8N60F N MOS F-CellTM VDMOS 1 3

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Datasheet: SVF7N60CSTR , SVF7N65CDTR , SVF7N65CFJH , SVF7N65CMJL , SVF7N65STR , SVF7N80FD , SVF7N80K , SVF7N80KL , AON6414A , SVF8N65RMJ , SVF8N70F , SVF8N70FJH , SVF8N70K , SVF8NN70FJ , SVF9N90F , SVFP10N60CFJD , SVFP12N60CFJD .

History: AP9587GJ-HF | BUK7626-100B | PSMN2R0-60ES | JCS4N70F | BUK7510-100B | MDIB6N70CTH | 2SK3013

Keywords - SVF8N65RDTR MOSFET datasheet

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