SVF8N65RMJ Datasheet and Replacement
Type Designator: SVF8N65RMJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 87 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
SVF8N65RMJ substitution
SVF8N65RMJ Datasheet (PDF)
svf8n65rmj svf8n65rdtr.pdf
SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1
svf8n60t svf8n60f.pdf
SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF7N65CDTR , SVF7N65CFJH , SVF7N65CMJL , SVF7N65STR , SVF7N80FD , SVF7N80K , SVF7N80KL , SVF8N65RDTR , IRFB4115 , SVF8N70F , SVF8N70FJH , SVF8N70K , SVF8NN70FJ , SVF9N90F , SVFP10N60CFJD , SVFP12N60CFJD , SVFP12N65CFJD .
History: BLF6G27L-50BN | SVF8N70F | AP2305 | FDR8305N | HSU4903 | MTDP9933KQ8 | MTB55N03N3
Keywords - SVF8N65RMJ MOSFET datasheet
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History: BLF6G27L-50BN | SVF8N70F | AP2305 | FDR8305N | HSU4903 | MTDP9933KQ8 | MTB55N03N3
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