SVF8N65RMJ Datasheet. Specs and Replacement

Type Designator: SVF8N65RMJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

SVF8N65RMJ substitution

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SVF8N65RMJ datasheet

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SVF8N65RMJ

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SVF8N65RMJ

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SVF8N65RMJ

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒

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SVF8N65RMJ

SVF8N60F 8A 600V N 2 SVF8N60F N MOS F-CellTM VDMOS 1 3 ... See More ⇒

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Detailed specifications: SVF7N65CDTR, SVF7N65CFJH, SVF7N65CMJL, SVF7N65STR, SVF7N80FD, SVF7N80K, SVF7N80KL, SVF8N65RDTR, IRF3710, SVF8N70F, SVF8N70FJH, SVF8N70K, SVF8NN70FJ, SVF9N90F, SVFP10N60CFJD, SVFP12N60CFJD, SVFP12N65CFJD

Keywords - SVF8N65RMJ MOSFET specs

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