SVF8N70FJH MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF8N70FJH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F

SVF8N70FJH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF8N70FJH Datasheet (PDF)

..1. Size:312K silan
svf8n70fjh.pdf

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9.3. Size:336K silan
svf8n60f.pdf