SVF8N70FJH Datasheet and Replacement
Type Designator: SVF8N70FJH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
SVF8N70FJH substitution
SVF8N70FJH Datasheet (PDF)
svf8n70f svf8n70k svf8nn70fj.pdf

SVF8N70F/K/FJ 8A700V N 2SVF8N70F/K/FJ N MOS F-CellTM VDMOS 13 1. 2.
svf8n65rmj svf8n65rdtr.pdf

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1
svf8n60t svf8n60f.pdf

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF7N65CMJL , SVF7N65STR , SVF7N80FD , SVF7N80K , SVF7N80KL , SVF8N65RDTR , SVF8N65RMJ , SVF8N70F , P55NF06 , SVF8N70K , SVF8NN70FJ , SVF9N90F , SVFP10N60CFJD , SVFP12N60CFJD , SVFP12N65CFJD , SVFP14N60CFJ , SVFP14N60CFJD .
History: 2SJ104 | SDF40N50JAM
Keywords - SVF8N70FJH MOSFET datasheet
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History: 2SJ104 | SDF40N50JAM



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