All MOSFET. SVF8N70K Datasheet

 

SVF8N70K Datasheet and Replacement


   Type Designator: SVF8N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO262
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SVF8N70K Datasheet (PDF)

 ..1. Size:368K  silan
 svf8n70f svf8n70k svf8nn70fj.pdf pdf_icon

SVF8N70K

SVF8N70F/K/FJ 8A700V N 2SVF8N70F/K/FJ N MOS F-CellTM VDMOS 13 1. 2.

 7.1. Size:312K  silan
 svf8n70fjh.pdf pdf_icon

SVF8N70K

SVF8N70FJH 8A700V N 2SVF8N70FJH N MOS F-CellTM VDMOS 13 1. 2.

 9.1. Size:384K  silan
 svf8n65rmj svf8n65rdtr.pdf pdf_icon

SVF8N70K

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 9.2. Size:433K  silan
 svf8n60t svf8n60f.pdf pdf_icon

SVF8N70K

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: RUH60D60M | KNB2710A | STD50N03L-1 | STD4NK60Z | 2N5397 | RUH30150M | 2SK2889K

Keywords - SVF8N70K MOSFET datasheet

 SVF8N70K cross reference
 SVF8N70K equivalent finder
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