SVF8N70K Datasheet. Specs and Replacement

Type Designator: SVF8N70K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO262

SVF8N70K substitution

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SVF8N70K datasheet

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SVF8N70K

SVF8N70FJH 8A 700V N 2 SVF8N70FJH N MOS F-CellTM VDMOS 1 3 1. 2. ... See More ⇒

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SVF8N70K

SVF8N65RD(MJ) 8A 650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1 ... See More ⇒

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svf8n60t svf8n60f.pdf pdf_icon

SVF8N70K

SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒

Detailed specifications: SVF7N65STR, SVF7N80FD, SVF7N80K, SVF7N80KL, SVF8N65RDTR, SVF8N65RMJ, SVF8N70F, SVF8N70FJH, IRFB4115, SVF8NN70FJ, SVF9N90F, SVFP10N60CFJD, SVFP12N60CFJD, SVFP12N65CFJD, SVFP14N60CFJ, SVFP14N60CFJD, SVFP14N65CFJD

Keywords - SVF8N70K MOSFET specs

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