All MOSFET. SVFP12N60CFJD Datasheet

 

SVFP12N60CFJD Datasheet and Replacement


   Type Designator: SVFP12N60CFJD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220F
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SVFP12N60CFJD Datasheet (PDF)

 ..1. Size:322K  silan
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SVFP12N60CFJD

SVFP12N60CFJD 12A600V N 2SVFP12N60CFJD N MOS F-CellTM VDMOS 1 3

 6.1. Size:320K  silan
 svfp12n65cfjd.pdf pdf_icon

SVFP12N60CFJD

SVFP12N65CFJD 12A650V N 2SVFP12N65CFJD N MOS F-CellTM VDMOS 1 3

 9.1. Size:321K  silan
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SVFP12N60CFJD

SVFP14N60CFJD 14A600V N 2SVFP14N60CFJD N MOS F-CellTM VDMOS 1 3

 9.2. Size:321K  silan
 svfp10n60cfjd.pdf pdf_icon

SVFP12N60CFJD

SVFP10N60CFJD 10A600V N 2SVFP10N60CFJD N MOS F-CellTM VDMOS 1 3

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History: MTW10N100E | 2SK1712 | BUK473-100A | SVG108R5NAT | P085AATX | BRFL12N65 | PCJ3139K

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