SVFP4N60CAMJ Datasheet. Specs and Replacement
Type Designator: SVFP4N60CAMJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO251
SVFP4N60CAMJ substitution
- MOSFET ⓘ Cross-Reference Search
SVFP4N60CAMJ datasheet
svfp4n60camj svfp4n60cadtr.pdf
SVFP4N60CAMJ/D 4A 600V N 2 SVFP4N60CAMJ/D N MOS F-CellTM VDMOS 1 3 ... See More ⇒
Detailed specifications: SVFP10N60CFJD, SVFP12N60CFJD, SVFP12N65CFJD, SVFP14N60CFJ, SVFP14N60CFJD, SVFP14N65CFJD, SVFP18N60FJD, SVFP4N60CADTR, 2N7002, SVFP7N60CFJD, SVFP7N65CDTR, SVFP7N65CMJ, SVFP7N70DTR, SVFP7N70MJ, SVG031R1NL5, SVG032R4NL3, SVG032R4NL5
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