All MOSFET. SVG062R8NL5 Datasheet

 

SVG062R8NL5 Datasheet and Replacement


   Type Designator: SVG062R8NL5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 109 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 742 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: PDFN8-5X6
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SVG062R8NL5 Datasheet (PDF)

 ..1. Size:415K  silan
 svg062r8nl5.pdf pdf_icon

SVG062R8NL5

SVG062R8NL5 140A60V N S D1SVG062R8NL5 N MOS 8 LVMOS S D2 7 DS 3 6

 9.1. Size:320K  silan
 svg066r5nsa.pdf pdf_icon

SVG062R8NL5

SVG066R5NSA 16.5A60V N 5 6 7 8SVG066R5NSA N MOS 4. 123. LVMOS 5678.

 9.2. Size:409K  silan
 svg063r5nl5.pdf pdf_icon

SVG062R8NL5

SVG063R5NL5 130A60V N S D1SVG063R5NL5 N MOS 8 LVMOS S D2 7 DS 3 6

 9.3. Size:341K  silan
 svg069r5ndtr svg069r5nmj svg069r5nt.pdf pdf_icon

SVG062R8NL5

SVG069R5ND(MJ)(T) 60A60V N 2SVG069R5ND(MJ)(T) N MOS LVMOS 11 3

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History: AONS66923 | SVGP20110NSTR | WSF3040 | MXP4004AT | IPI200N15N3 | DH100P30E | MEE42942-G

Keywords - SVG062R8NL5 MOSFET datasheet

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