All MOSFET. SVG069R5NMJ Datasheet

 

SVG069R5NMJ Datasheet and Replacement


   Type Designator: SVG069R5NMJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 432 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO251
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SVG069R5NMJ Datasheet (PDF)

 ..1. Size:341K  silan
 svg069r5ndtr svg069r5nmj svg069r5nt.pdf pdf_icon

SVG069R5NMJ

SVG069R5ND(MJ)(T) 60A60V N 2SVG069R5ND(MJ)(T) N MOS LVMOS 11 3

 9.1. Size:320K  silan
 svg066r5nsa.pdf pdf_icon

SVG069R5NMJ

SVG066R5NSA 16.5A60V N 5 6 7 8SVG066R5NSA N MOS 4. 123. LVMOS 5678.

 9.2. Size:409K  silan
 svg063r5nl5.pdf pdf_icon

SVG069R5NMJ

SVG063R5NL5 130A60V N S D1SVG063R5NL5 N MOS 8 LVMOS S D2 7 DS 3 6

 9.3. Size:415K  silan
 svg062r8nl5.pdf pdf_icon

SVG069R5NMJ

SVG062R8NL5 140A60V N S D1SVG062R8NL5 N MOS 8 LVMOS S D2 7 DS 3 6

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History: BSD235C | SVGP20110NSTR | 2SK1947 | MXP4004AT | 2SK3513S | SMG2325P | MEE42942-G

Keywords - SVG069R5NMJ MOSFET datasheet

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