SVG069R5NMJ Datasheet and Replacement
Type Designator: SVG069R5NMJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 432 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO251
SVG069R5NMJ substitution
SVG069R5NMJ Datasheet (PDF)
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Datasheet: SVG041R4NL5 , SVG041R7NL5 , SVG042R1NL5 , SVG042R5NL5 , SVG062R8NL5 , SVG063R5NL5 , SVG066R5NSA , SVG069R5NDTR , IRFP250 , SVG069R5NT , SVG075R5NT , SVG076R5NDTR , SVG076R5NKL , SVG076R5NS , SVG076R5NSTR , SVG076R5NT , SVG083R4NP7 .
History: BUK7227-100B | BLF7G15LS-300P | PSMN1R2-25YLC | AONS66923 | STW23NM50N | PSMN035-150P | MDP12N50BTH
Keywords - SVG069R5NMJ MOSFET datasheet
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History: BUK7227-100B | BLF7G15LS-300P | PSMN1R2-25YLC | AONS66923 | STW23NM50N | PSMN035-150P | MDP12N50BTH
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