SVG083R4NS Datasheet. Specs and Replacement

Type Designator: SVG083R4NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 925 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO263

SVG083R4NS substitution

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SVG083R4NS datasheet

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 svg083r4nt svg083r4ns svg083r4nstr svg083r4np7.pdf pdf_icon

SVG083R4NS

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 7.1. Size:420K  silan
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SVG083R4NS

SVG083R6NAL5 138A 80V N S D 1 SVG083R6NAL5 N MOS 8 LVMOS S D 2 7 D S 3 6 ... See More ⇒

 9.1. Size:481K  silan
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SVG083R4NS

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SVG083R4NS

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Detailed specifications: SVG069R5NT, SVG075R5NT, SVG076R5NDTR, SVG076R5NKL, SVG076R5NS, SVG076R5NSTR, SVG076R5NT, SVG083R4NP7, 2SK3568, SVG083R4NSTR, SVG083R4NT, SVG083R6NAL5, SVG085R9NT, SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, SVG086R0NSTR

Keywords - SVG083R4NS MOSFET specs

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