SVG083R6NAL5 Datasheet and Replacement

   Type Designator: SVG083R6NAL5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 138 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 735 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: PDFN8-5X6
      - MOSFET Cross-Reference Search