SVG083R6NAL5 Datasheet. Specs and Replacement

Type Designator: SVG083R6NAL5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 138 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 735 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: PDFN8-5X6

SVG083R6NAL5 substitution

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SVG083R6NAL5 datasheet

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SVG083R6NAL5

SVG083R6NAL5 138A 80V N S D 1 SVG083R6NAL5 N MOS 8 LVMOS S D 2 7 D S 3 6 ... See More ⇒

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Detailed specifications: SVG076R5NKL, SVG076R5NS, SVG076R5NSTR, SVG076R5NT, SVG083R4NP7, SVG083R4NS, SVG083R4NSTR, SVG083R4NT, RFP50N06, SVG085R9NT, SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT

Keywords - SVG083R6NAL5 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs