SVG094R1NKL Datasheet. Specs and Replacement
Type Designator: SVG094R1NKL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 866 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: TO262
SVG094R1NKL substitution
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SVG094R1NKL datasheet
Detailed specifications: SVG085R9NT, SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT, 2N60, SVG094R1NS, SVG094R1NSTR, SVG094R1NT, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT
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