All MOSFET. SVG094R1NKL Datasheet

 

SVG094R1NKL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVG094R1NKL
   Marking Code: 094R1NKL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 98 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 866 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO262

 SVG094R1NKL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVG094R1NKL Datasheet (PDF)

 ..1. Size:378K  silan
svg094r1nt svg094r1ns svg094r1nstr svg094r1nkl.pdf

SVG094R1NKL SVG094R1NKL

SVG094R1NT(S)(KL) 120A90V N 2SVG094R1NT(S)(KL) N MOS LVMOS 1

 9.1. Size:339K  silan
svg096r5nt svg096r5ns svg096r5nkl.pdf

SVG094R1NKL SVG094R1NKL

SVG096R5NT(S)(KL) 120A90V N 2SVG096R5NT(S)(KL) N MOS 1 LVMOS 3

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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