SVG094R1NKL MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG094R1NKL
Marking Code: 094R1NKL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 98 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 866 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: TO262
SVG094R1NKL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG094R1NKL Datasheet (PDF)
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SVG094R1NT(S)(KL) 120A90V N 2SVG094R1NT(S)(KL) N MOS LVMOS 1
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SVG096R5NT(S)(KL) 120A90V N 2SVG096R5NT(S)(KL) N MOS 1 LVMOS 3
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![SVG094R1NKL](https://alltransistors.com/images/us.png)
![SVG094R1NKL](https://alltransistors.com/images/es.png)
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