SVG094R1NS Datasheet. Specs and Replacement

Type Designator: SVG094R1NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 866 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO263

SVG094R1NS substitution

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SVG094R1NS datasheet

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SVG094R1NS

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SVG094R1NS

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Detailed specifications: SVG086R0NDTR, SVG086R0NL5TR, SVG086R0NS, SVG086R0NSTR, SVG086R0NT, SVG086R5NT, SVG087R0NT, SVG094R1NKL, 8N60, SVG094R1NSTR, SVG094R1NT, SVG096R5NS, SVG096R5NKL, SVG096R5NT, SVG10120NADTR, SVG10120NAT, SVG10120NSA

Keywords - SVG094R1NS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.