SVG094R1NS MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVG094R1NS
   Marking Code: 094R1NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 98 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 866 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO263

SVG094R1NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search