SVG096R5NT MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG096R5NT
Marking Code: 096R5NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 550 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO220
SVG096R5NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG096R5NT Datasheet (PDF)
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SVG096R5NT(S)(KL) 120A90V N 2SVG096R5NT(S)(KL) N MOS 1 LVMOS 3
9.1. Size:378K silan
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SVG094R1NT(S)(KL) 120A90V N 2SVG094R1NT(S)(KL) N MOS LVMOS 1
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .