SVG103R0NKL MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG103R0NKL
Marking Code: 103RONKL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 223 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 171 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1264 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO262
SVG103R0NKL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG103R0NKL Datasheet (PDF)
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SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
![SVG103R0NKL](https://alltransistors.com/images/us.png)
![SVG103R0NKL](https://alltransistors.com/images/es.png)
![SVG103R0NKL](https://alltransistors.com/images/ru.png)
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