SVG103R0NS6TR MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVG103R0NS6TR
   Marking Code: 103RONS6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 171 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1264 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO263-6L

SVG103R0NS6TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVG103R0NS6TR Datasheet (PDF)

..1. Size:407K silan
svg103r0nt svg103r0ns svg103r0nstr svg103r0nkl svg103r0ns6tr svg103r0np7.pdf

SVG103R0NT(S)(KL)(S6)(P7) 180A100V N 42SVG103R0NT(S)(KL)(S6)(P7) N MOS 1 1 LVMOS 3 2,3,5,6,71. 2.

7.1. Size:404K silan
svg103r9ns.pdf

SVG103R9NS 120A100V N 2SVG103R9NS N MOS LVMOS 1 3

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svg104r5nt svg104r5ns.pdf

SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.

9.2. Size:312K silan
svg10120nsa.pdf