SVG104R0NS Datasheet. Specs and Replacement

Type Designator: SVG104R0NS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 896 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

SVG104R0NS substitution

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SVG104R0NS datasheet

 ..1. Size:385K  silan
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SVG104R0NS

SVG104R0NT(S) 120A 100V N 2 SVG104R0NT(S) N MOS LVMOS 1 3 ... See More ⇒

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SVG104R0NS

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

 7.2. Size:413K  silan
 svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf pdf_icon

SVG104R0NS

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 7.3. Size:422K  silan
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SVG104R0NS

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Detailed specifications: SVG10120NSA, SVG103R0NKL, SVG103R0NP7, SVG103R0NS, SVG103R0NS6TR, SVG103R0NSTR, SVG103R0NT, SVG103R9NS, EMB04N03H, SVG104R0NSTR, SVG104R0NT, SVG104R2NT, SVG104R5NF, SVG104R5NKL, SVG104R5NS6, SVG104R5NS6TR, SVG104R5NSTR

Keywords - SVG104R0NS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.