SVG104R2NT Datasheet and Replacement
Type Designator: SVG104R2NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 171 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 794 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO220
SVG104R2NT substitution
SVG104R2NT Datasheet (PDF)
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
svg104r5nt svg104r5ns svg104r5nstr svg104r5nf svg104r5nkl svg104r5ns6 svg104r5ns6tr.pdf
SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3
svg104r0nt svg104r0ns svg104r0nstr.pdf
SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3
Datasheet: SVG103R0NS , SVG103R0NS6TR , SVG103R0NSTR , SVG103R0NT , SVG103R9NS , SVG104R0NS , SVG104R0NSTR , SVG104R0NT , HY1906P , SVG104R5NF , SVG104R5NKL , SVG104R5NS6 , SVG104R5NS6TR , SVG104R5NSTR , SVG105R4NKL , SVG105R4NS , SVG105R4NSTR .
History: FTP02N04NA | HGW100N12SL | FQD19N10LTF | SI2309A | CEP1195 | IRLD110PBF | OSG65R200FEF-NB
Keywords - SVG104R2NT MOSFET datasheet
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History: FTP02N04NA | HGW100N12SL | FQD19N10LTF | SI2309A | CEP1195 | IRLD110PBF | OSG65R200FEF-NB
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