SVG104R2NT MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG104R2NT
Marking Code: 104R2NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 171 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 84 nC
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 794 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220
SVG104R2NT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG104R2NT Datasheet (PDF)
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
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SVG104R5NT(S)(F)(KL)(S6) 120A100V N 2SVG104R5NT(S)(F)(KL)(S6) N MOS 1 LVMOS 3
svg104r0nt svg104r0ns svg104r0nstr.pdf
SVG104R0NT(S) 120A100V N 2SVG104R0NT(S) N MOS LVMOS 1 3
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
