SVG104R5NS6 Datasheet. Specs and Replacement

Type Designator: SVG104R5NS6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 864 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263-6L

SVG104R5NS6 substitution

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SVG104R5NS6 datasheet

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SVG104R5NS6

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SVG104R5NS6

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒

 7.1. Size:385K  silan
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SVG104R5NS6

SVG104R0NT(S) 120A 100V N 2 SVG104R0NT(S) N MOS LVMOS 1 3 ... See More ⇒

 7.2. Size:422K  silan
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Detailed specifications: SVG103R0NT, SVG103R9NS, SVG104R0NS, SVG104R0NSTR, SVG104R0NT, SVG104R2NT, SVG104R5NF, SVG104R5NKL, IRFP064N, SVG104R5NS6TR, SVG104R5NSTR, SVG105R4NKL, SVG105R4NS, SVG105R4NSTR, SVG105R4NT, SVG105R5NT, SVG108R5NAD

Keywords - SVG104R5NS6 MOSFET specs

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