SVG105R4NKL Datasheet and Replacement
Type Designator: SVG105R4NKL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO262
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SVG105R4NKL Datasheet (PDF)
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SVG105R4NT(S)(KL) 120A100V N 2SVG105R4NT(S)(KL) N MOS LVMOS 1
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SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
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SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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History: GSM3030 | IRF6612
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