SVG105R4NKL Datasheet. Specs and Replacement
Type Designator: SVG105R4NKL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO262
SVG105R4NKL substitution
- MOSFET ⓘ Cross-Reference Search
SVG105R4NKL datasheet
svg105r4nt svg105r4ns svg105r4nstr svg105r4nkl.pdf
SVG105R4NT(S)(KL) 120A 100V N 2 SVG105R4NT(S)(KL) N MOS LVMOS 1 ... See More ⇒
svg104r5nt svg104r5ns.pdf
Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒
svg10120nsa.pdf
SVG10120NSA 16A 100V N 5 6 7 8 4. SVG10120NSA N MOS 1 2 3. 5 6 7 8. LVMOS 4 ... See More ⇒
Detailed specifications: SVG104R0NSTR, SVG104R0NT, SVG104R2NT, SVG104R5NF, SVG104R5NKL, SVG104R5NS6, SVG104R5NS6TR, SVG104R5NSTR, IRFZ44N, SVG105R4NS, SVG105R4NSTR, SVG105R4NT, SVG105R5NT, SVG108R5NAD, SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ
Keywords - SVG105R4NKL MOSFET specs
SVG105R4NKL cross reference
SVG105R4NKL equivalent finder
SVG105R4NKL pdf lookup
SVG105R4NKL substitution
SVG105R4NKL replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
