SVG105R5NT
MOSFET. Datasheet pdf. Equivalent
Type Designator: SVG105R5NT
Marking Code: 105R5NT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 98
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 80
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 565
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
TO220
SVG105R5NT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVG105R5NT
Datasheet (PDF)
..1. Size:320K silan
svg105r5nt.pdf
SVG105R5NT 120A98V N 2SVG105R5NT N MOS LVMOS 1
9.1. Size:276K 1
svg104r5nt svg104r5ns.pdf
SilanMicroelectronicsSVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1especially tailored to minimize on-state resistance, provide superior 3switching performance. 1.Gate 2.
9.2. Size:312K silan
svg10120nsa.pdf
SVG10120NSA 16A100V N 5 6 7 8 4. SVG10120NSA N MOS 123. 5678. LVMOS 4
9.3. Size:317K silan
svg108r5nad.pdf
SVG108R5NAD 94A100V N 2SVG108R5NAD N MOS LVMOS 1
9.8. Size:422K silan
svg104r2nt.pdf
SVG104R2NT 120A100V N 2SVG104R2NT N MOS LVMOS 1
9.11. Size:558K silan
svg108r5nal5.pdf
SVG108R5NAL5 80A100V N S D1SVG108R5NAL5 N MOS 8 LVMOS S D2 7 DS 3 6
9.12. Size:404K silan
svg103r9ns.pdf
SVG103R9NS 120A100V N 2SVG103R9NS N MOS LVMOS 1 3
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.