SVG105R5NT Datasheet. Specs and Replacement
Type Designator: SVG105R5NT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 565 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
SVG105R5NT substitution
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SVG105R5NT datasheet
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SVG105R4NT(S)(KL) 120A 100V N 2 SVG105R4NT(S)(KL) N MOS LVMOS 1 ... See More ⇒
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Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS 2 field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been 1 especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.... See More ⇒
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SVG10120NSA 16A 100V N 5 6 7 8 4. SVG10120NSA N MOS 1 2 3. 5 6 7 8. LVMOS 4 ... See More ⇒
Detailed specifications: SVG104R5NKL, SVG104R5NS6, SVG104R5NS6TR, SVG104R5NSTR, SVG105R4NKL, SVG105R4NS, SVG105R4NSTR, SVG105R4NT, 20N60, SVG108R5NAD, SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ, SVG108R5NAMQ, SVG108R5NAT, SVG15670ND, SVG15670NL5
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
