All MOSFET. SVG108R5NAD Datasheet

 

SVG108R5NAD Datasheet and Replacement


   Type Designator: SVG108R5NAD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 94 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 408 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO252
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SVG108R5NAD Datasheet (PDF)

 ..1. Size:317K  silan
 svg108r5nad.pdf pdf_icon

SVG108R5NAD

SVG108R5NAD 94A100V N 2SVG108R5NAD N MOS LVMOS 1

 4.1. Size:347K  silan
 svg108r5namq svg108r5namj.pdf pdf_icon

SVG108R5NAD

SVG108R5NAMQ(MJ) 94A100V N 2SVG108R5NAMQ(MJ) N MOS LVMOS 1

 4.2. Size:333K  silan
 svg108r5nam svg108r5nat.pdf pdf_icon

SVG108R5NAD

SVG108R5NAM(T) 94A100V N 2SVG108R5NAM(T) N MOS LVMOS 1

 4.3. Size:558K  silan
 svg108r5nal5.pdf pdf_icon

SVG108R5NAD

SVG108R5NAL5 80A100V N S D1SVG108R5NAL5 N MOS 8 LVMOS S D2 7 DS 3 6

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History: IXTX8N150L | IXFH16N60P3 | FRM130R | GSM4936S | ECH8660 | 2SK2117 | ATM2N65TE

Keywords - SVG108R5NAD MOSFET datasheet

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