SVG108R5NAD Datasheet. Specs and Replacement

Type Designator: SVG108R5NAD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 408 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO252

SVG108R5NAD substitution

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SVG108R5NAD datasheet

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SVG108R5NAD

SVG108R5NAL5 80A 100V N S D 1 SVG108R5NAL5 N MOS 8 LVMOS S D 2 7 D S 3 6 ... See More ⇒

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Detailed specifications: SVG104R5NS6, SVG104R5NS6TR, SVG104R5NSTR, SVG105R4NKL, SVG105R4NS, SVG105R4NSTR, SVG105R4NT, SVG105R5NT, IRF540N, SVG108R5NAL5, SVG108R5NAM, SVG108R5NAMJ, SVG108R5NAMQ, SVG108R5NAT, SVG15670ND, SVG15670NL5, SVG15670NSA

Keywords - SVG108R5NAD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs