SVG108R5NAD Datasheet and Replacement
Type Designator: SVG108R5NAD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 87 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 94 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 408 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO252
SVG108R5NAD substitution
SVG108R5NAD Datasheet (PDF)
svg108r5namq svg108r5namj.pdf
SVG108R5NAMQ(MJ) 94A100V N 2SVG108R5NAMQ(MJ) N MOS LVMOS 1
svg108r5nam svg108r5nat.pdf
SVG108R5NAM(T) 94A100V N 2SVG108R5NAM(T) N MOS LVMOS 1
svg108r5nal5.pdf
SVG108R5NAL5 80A100V N S D1SVG108R5NAL5 N MOS 8 LVMOS S D2 7 DS 3 6
Datasheet: SVG104R5NS6 , SVG104R5NS6TR , SVG104R5NSTR , SVG105R4NKL , SVG105R4NS , SVG105R4NSTR , SVG105R4NT , SVG105R5NT , IRF540 , SVG108R5NAL5 , SVG108R5NAM , SVG108R5NAMJ , SVG108R5NAMQ , SVG108R5NAT , SVG15670ND , SVG15670NL5 , SVG15670NSA .
History: NTMFS4926N | SSF2341E | STD35NF3LLT4 | IXTT140N10P | SWMN7N65K | AP6N090N | NCE75H21T
Keywords - SVG108R5NAD MOSFET datasheet
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History: NTMFS4926N | SSF2341E | STD35NF3LLT4 | IXTT140N10P | SWMN7N65K | AP6N090N | NCE75H21T
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