SVGP104R5NAS Datasheet. Specs and Replacement
Type Designator: SVGP104R5NAS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 829 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
SVGP104R5NAS substitution
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SVGP104R5NAS datasheet
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Detailed specifications: SVGP02R58NL5, SVGP03100NCS, SVGP066R1NL5, SVGP069R5NSA, SVGP082R6NL5A, SVGP103R0NP7, SVGP103R0NT, SVGP104R1NL5, 2N7000, SVGP104R5NASTR, SVGP104R5NAT, SVGP104R5NS, SVGP104R5NSTR, SVGP104R5NT, SVGP107R0NL5, SVGP15110NL5, SVGP15140NL5A
Keywords - SVGP104R5NAS MOSFET specs
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