All MOSFET. SVGP15751PL3 Datasheet

 

SVGP15751PL3 Datasheet and Replacement


   Type Designator: SVGP15751PL3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: DFN8-3.3X3.3
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SVGP15751PL3 Datasheet (PDF)

 ..1. Size:427K  silan
 svgp15751pl3.pdf pdf_icon

SVGP15751PL3

SVGP15751PL3 -3A-150V P SVGP15751PL3 P MOS S D18 LVMOS S D2 7 DS 3 6

 7.1. Size:380K  silan
 svgp157r2ns.pdf pdf_icon

SVGP15751PL3

SVGP157R2NS 100A150V N 2SVGP157R2NS N MOS LVMOS 1 3

 7.2. Size:424K  silan
 svgp157r5nt svgp157r5np7.pdf pdf_icon

SVGP15751PL3

SVGP157R5NT(P7) 100A150V N 2SVGP157R5NT(P7) N MOS LVMOS 1

 8.1. Size:399K  silan
 svgp15140nl5a.pdf pdf_icon

SVGP15751PL3

SVGP15140NL5A 100A150V N SVGP15140NL5A N MOS S D1 8 LVMOS S 7 D2 DS 3 6

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - SVGP15751PL3 MOSFET datasheet

 SVGP15751PL3 cross reference
 SVGP15751PL3 equivalent finder
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