SVGP20110NP7 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGP20110NP7
Marking Code: P20110NP7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 64 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO247
SVGP20110NP7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGP20110NP7 Datasheet (PDF)
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