SVGP20110NP7 Datasheet. Specs and Replacement
Type Designator: SVGP20110NP7 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO247
SVGP20110NP7 substitution
- MOSFET ⓘ Cross-Reference Search
SVGP20110NP7 datasheet
svgp20500nl5.pdf
SVGP20500NL5 24A 200V N S D 1 8 SVGP20500NL5 N MOS S D 2 7 LVMOS D S 3 6 ... See More ⇒
Detailed specifications: SVGP15140NL5A, SVGP15161PL3A, SVGP15751PL3, SVGP157R2NS, SVGP157R5NP7, SVGP157R5NT, SVGP159R3NL5ATR, SVGP159R3NL5TR, IRFP260, SVGP20110NS, SVGP20110NSTR, SVGP20110NT, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS
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