SVGP20110NP7 Datasheet and Replacement
Type Designator: SVGP20110NP7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO247
SVGP20110NP7 substitution
SVGP20110NP7 Datasheet (PDF)
svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf
SVGP20110NT(S)(P7) 88A200V N 2SVGP20110NT(S)(P7) N MOS LVMOS 1
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Datasheet: SVGP15140NL5A , SVGP15161PL3A , SVGP15751PL3 , SVGP157R2NS , SVGP157R5NP7 , SVGP157R5NT , SVGP159R3NL5ATR , SVGP159R3NL5TR , 8205A , SVGP20110NS , SVGP20110NSTR , SVGP20110NT , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS .
History: HTD150P06 | APM4015PU | 2SK1808 | 8N60L-TF2-T | AP04N60S-H-HF | 2SK3604-01L | KI1563DH
Keywords - SVGP20110NP7 MOSFET datasheet
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History: HTD150P06 | APM4015PU | 2SK1808 | 8N60L-TF2-T | AP04N60S-H-HF | 2SK3604-01L | KI1563DH
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