SVGP20110NT Datasheet and Replacement
Type Designator: SVGP20110NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO220
SVGP20110NT substitution
SVGP20110NT Datasheet (PDF)
svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf
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Datasheet: SVGP157R2NS , SVGP157R5NP7 , SVGP157R5NT , SVGP159R3NL5ATR , SVGP159R3NL5TR , SVGP20110NP7 , SVGP20110NS , SVGP20110NSTR , IRF9540N , SVGP20500NL5 , SVGQ041R3NL5V-2HSTR , SVGQ041R7NL5V-2HSTR , SVGQ042R8NL5V-2HSTR , SVGQ047R6NL5V-2HS , SVGQ06100ND , SVGQ06130PD , SVGQ109R5NAD .
History: FS2KMJ-3 | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | IXTH360N055T2 | HUFA75829D3S
Keywords - SVGP20110NT MOSFET datasheet
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History: FS2KMJ-3 | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | IXTH360N055T2 | HUFA75829D3S
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