SVGP20110NT Datasheet. Specs and Replacement

Type Designator: SVGP20110NT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO220

SVGP20110NT substitution

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SVGP20110NT datasheet

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 svgp20110nt svgp20110ns svgp20110nstr svgp20110np7.pdf pdf_icon

SVGP20110NT

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SVGP20110NT

SVGP20500NL5 24A 200V N S D 1 8 SVGP20500NL5 N MOS S D 2 7 LVMOS D S 3 6 ... See More ⇒

Detailed specifications: SVGP157R2NS, SVGP157R5NP7, SVGP157R5NT, SVGP159R3NL5ATR, SVGP159R3NL5TR, SVGP20110NP7, SVGP20110NS, SVGP20110NSTR, SKD502T, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, SVGQ06130PD, SVGQ109R5NAD

Keywords - SVGP20110NT MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs