SVGQ041R3NL5V-2HSTR Datasheet and Replacement

   Type Designator: SVGQ041R3NL5V-2HSTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 2020 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: PDFN8Q-5X6
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