SVGQ041R7NL5V-2HSTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVGQ041R7NL5V-2HSTR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 1221 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: PDFN8Q-5X6
SVGQ041R7NL5V-2HSTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVGQ041R7NL5V-2HSTR Datasheet (PDF)
svgq041r7nl5v-2hstr.pdf
SVGQ041R7NL5V-2HS 160A40V N S D1 8SVGQ041R7NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
svgq041r3nl5v-2hstr.pdf
SVGQ041R3NL5V-2HS 190A40V N S D1 8SVGQ041R3NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
svgq042r8nl5v-2hstr.pdf
SVGQ042R8NL5V-2HS 112A40V N S D1 8SVGQ042R8NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
svgq047r6nl5v-2hs.pdf
SVGQ047R6NL5V-2HS 65A40V N S D1 8SVGQ047R6NL5V-2HS N MOS S 7 D2 LVMOS DS 3 6 G4 5 D 12V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100