SVGQ06130PD Datasheet. Specs and Replacement

Type Designator: SVGQ06130PD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 534 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

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SVGQ06130PD substitution

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SVGQ06130PD datasheet

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Detailed specifications: SVGP20110NSTR, SVGP20110NT, SVGP20500NL5, SVGQ041R3NL5V-2HSTR, SVGQ041R7NL5V-2HSTR, SVGQ042R8NL5V-2HSTR, SVGQ047R6NL5V-2HS, SVGQ06100ND, IRFB3607, SVGQ109R5NAD, SVS11N60DD2TR, SVS11N60FD2, SVS11N60FJD2, SVS11N60KD2, SVS11N60SD2, SVS11N60SD2TR, SVS11N60TD2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.