SVS60R190FD4 Datasheet. Specs and Replacement

Type Designator: SVS60R190FD4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220F

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SVS60R190FD4 substitution

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SVS60R190FD4 datasheet

 ..1. Size:727K  silan
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SVS60R190FD4

SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 20A, 600V MOS 2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 N 12 3 1 TO-220FJD-3L MOSFET MOS 3 1... See More ⇒

 8.1. Size:537K  silan
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SVS60R190FD4

SVS60R360FJH(FJD)(D)(L8A)E3 11A 600V MOS 2 SVS60R360FJH(FJD)(D)(L8A)E3 N MOSFET MOS 1 SVS60R360FJH(FJD)(D)(L8A)E3 ... See More ⇒

Detailed specifications: SVS5N65FD2, SVS5N65FJHD2, SVS5N70DD2TR, SVS5N70DTR, SVS5N70FD2, SVS5N70KD2, SVS5N70MJD2, SVS60R190DD4TR, AON7403, SVS60R190FJDD4, SVS60R190KD4, SVS60R190L8AD4TR, SVS60R190SD4, SVS60R190SD4TR, SVS60R190TD4, SVS60R360DE3TR, SVS60R360FJDE3

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