SVS60R190FD4 Datasheet and Replacement
Type Designator: SVS60R190FD4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220F
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SVS60R190FD4 Datasheet (PDF)
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SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 20A, 600V MOS 2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 N 1231TO-220FJD-3L MOSFET MOS 3 1
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SVS60R360FJH(FJD)(D)(L8A)E3 11A600V MOS 2SVS60R360FJH(FJD)(D)(L8A)E3 N MOSFET MOS 1 SVS60R360FJH(FJD)(D)(L8A)E3
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCEP3045BGU | SL2016 | FRX130D2 | JST80N30T2A | IPB80N08S2L-07 | BRF2N65 | BSP75GQ
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History: NCEP3045BGU | SL2016 | FRX130D2 | JST80N30T2A | IPB80N08S2L-07 | BRF2N65 | BSP75GQ
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