SVS60R190SD4 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS60R190SD4
Marking Code: 60R190D4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
Rise Time (tr): 51 nS
Drain-Source Capacitance (Cd): 53 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO263
SVS60R190SD4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS60R190SD4 Datasheet (PDF)
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .