All MOSFET. SVS60R190TD4 Datasheet

 

SVS60R190TD4 Datasheet and Replacement


   Type Designator: SVS60R190TD4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220
 

 SVS60R190TD4 substitution

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SVS60R190TD4 Datasheet (PDF)

 ..1. Size:727K  silan
 svs60r190fjdd4 svs60r190fd4 svs60r190dd4tr svs60r190l8ad4tr svs60r190td4 svs60r190sd4 svs60r190sd4tr svs60r190kd4.pdf pdf_icon

SVS60R190TD4

SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 20A, 600V MOS 2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 N 1231TO-220FJD-3L MOSFET MOS 3 1

 8.1. Size:537K  silan
 svs60r360fjhe3 svs60r360fjde3 svs60r360de3tr svs60r360l8ae3tr.pdf pdf_icon

SVS60R190TD4

SVS60R360FJH(FJD)(D)(L8A)E3 11A600V MOS 2SVS60R360FJH(FJD)(D)(L8A)E3 N MOSFET MOS 1 SVS60R360FJH(FJD)(D)(L8A)E3

Datasheet: SVS5N70MJD2 , SVS60R190DD4TR , SVS60R190FD4 , SVS60R190FJDD4 , SVS60R190KD4 , SVS60R190L8AD4TR , SVS60R190SD4 , SVS60R190SD4TR , AO3407 , SVS60R360DE3TR , SVS60R360FJDE3 , SVS60R360FJHE3 , SVS60R360L8AE3TR , SVS65R240DD4TR , SVS65R240FD4 , SVS65R240FJDD4 , SVS65R240L8AD4TR .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - SVS60R190TD4 MOSFET datasheet

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